? semiconductor components industries, llc, 2009 january, 2009 ? rev. 0 publication order number: BAW56M3/d 1 BAW56M3t5g dual switching diode common anode the BAW56M3t5g device is a spin ? off of our popular sot ? 23 three ? leaded device. it is designed for switching applications and is housed in the sot ? 723 surface mount package. this device is ideal for low ? power surface mount applications where board space is at a premium. features ? reduces board space ? this is a halide ? free device ? this is a pb ? free device maximum ratings (each diode) rating symbol value unit reverse voltage v r 75 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 265 2.1 mw mw/ c thermal resistance, junction ? to ? ambient r ja 470 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 640 5.1 mw mw/ c thermal resistance, junction ? to ? ambient r ja 195 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 70 v dual common anode switching diode device package shipping ? ordering information BAW56M3t5g sot ? 723 (pb ? free) 8000/tape & reel sot ? 723 case 631aa style 4 marking diagram http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. an = specific device code m = date code an m 1 3 2 1 anode 3 cathode 1 2 cathode
BAW56M3t5g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit reverse breakdown voltage (i (br) = 100 a) v (br) 70 ? v reverse voltage leakage current (v r = 25 v, t j = 150 c) (v r = 70 v) (v r = 70 v, t j = 150 c) i r ? ? ? 30 2.5 50 a diode capacitance (v r = 0 v, f = 1.0 mhz) c d ? 2.0 pf forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f ? ? ? ? 715 855 1000 1250 mv reverse recovery time (i f = i r = 10 ma, i r(rec) = 1.0 ma) (figure 1) r l = 100 t rr ? 6.0 ns notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit
BAW56M3t5g http://onsemi.com 3 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.75 0 v r , reverse voltage (volts) 1.5 1.25 1.0 0.75 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( a) curves applicable to each cathode
BAW56M3t5g http://onsemi.com 4 package dimensions sot ? 723 case 631aa ? 01 issue c dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 (0.0032) y 2x e 1 2 3 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 4: pin 1. cathode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 BAW56M3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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